13μm cutoff InAs/GaSb Type-II superlattice nBn detectors with a high quantum efficiency grown by MOCVD

In this work we report the growth and fabrication optimisation of a long wavelength InAs/GaSb Type-II superlattice (T2SL) nBn detector grown by metal-organic chemical vapor deposition (MOCVD). A GaAs like interfacial scheme was employed to grow the T2SLs lattice matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier removing the need for AlSb based materials within this detector.

This repository contains the X-ray diffraction data, electrical characterisation data and the optical characterisation data of the InAs/GaSb T2SL nBn detectors

The X-ray diffraction data was used to quantify the epitaxial layer thickness, interfacial layer composition and lattice match of the InAs/GaSb T2SLs and consists of the diffraction intensity against incident X-ray angle.

The electrical characterisation data was used to quantify the dark current performance of the detectors. The electrical characterisation data consists of dark current against voltage of the detectors. The electrical characterisation data also includes how the dark current density changes with device diameter.

The optical characterisation data consists of the responsivity, quantum efficiency and detectivity against wavelength for the detectors.