Thermally Activated Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructures

Electrical measurements (I(V)), with applied voltage (V) and measured current (I) have been performed at various temperatures on GaAs/AlGaAs triple barrier resonant tunnelling structures. Data is available in .txt files, with a two column format, one for voltage, measured in volts and the other for current, measured in Ampere’s. Each file has a header which indicates which column corresponds to voltage or current. Each file is named to represent the sample wafer under test, the pins used on a 20-way ceramic package into which the sample wafers were mounted and bonded, and the temperature at which the data was taken. Seven devices have been measured electrically, with the epitaxial layer structure differing between each sample as described in the publication. The I(V) measurements were taken using a four-wire technique on an Agilent Technologies E5270B 8 Slot Precision Mainframe and two E5281B Precision Medium Power SMU Modules. One SMU module was held at 0.0V, on which the current was measured, with the other SMU module varied between 0.0 and 0.6V, on which the applied voltage was measured. Samples were mounted in a Cryomech PT403 closed-cycle pulse-tube cryostat which utilises an Oxford Instruments Mercury iTC temperature controller to regulate the temperature. Measurements were automated using bespoke written python code.

Results are published in the article at http://iopscience.iop.org/0268-1242/30/10/105035