Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

These data demonstrate the increase in both responsivity and sensitivity for a cold-electron bolometer utilising a strained-silicon absorber when compared to an otherwise identical device using an unstrained absorber. In both devices the absober is also highly-doped. Both detectors have been studied at a phonon bath temperature of 350 mK. When observing a 77-Kelvin black-body source the noise-equivalent power has been found to be 3.0*10^-16 W/rtHz for the unstrained detector and 6.6*10^-17 W/rtHz for the strained detector.

The data comprise three sets of I-V data for both a strained and unstrained detector. These data have been recorded in the presence of optical power from 77-K and 300-K sources (files: *_77K* and *_300K*) and also when in darkness (files *dark*). The columns in these files (in order) contain: voltage, current, computed electron temperature, computed superconducting gap. Also included are measurements of the device noise; in these files the column correspond to: voltage, current, noise voltage. Noise files are included for both the 77- and 300-K illuminations. There is a header row in each file and all data are in SI units.

These data support the findings reported in the Brien et al., "Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers" http://dx.doi.org/10.1007/s10909-016-1569-x