Diamond on GaN/III-N membrane thermal stress characterisation data

The dataset contains characterisation of chemical vapour deposited (CVD) diamond on gallium nitride/III-nitride (GaN/III-N) membranes.

Characterisation includes:

• Surface Profilometry data using a BRUKER DEKTAK profilometer of the 0.5, 2.0 and 5 mm diameter membranes. Profilometry data is given for before and after CVD diamond is deposited on the III-N side of the GaN/III-N membrane in 2 directions orthogonal to one another.
• Raman spectroscopy of the 0.5 and 2.0 mm membranes at different locations and stages during the fabrication process. Screenshot data is also given for the 5.0 mm membrane which was destroyed, as detailed in the study.
• Energy-dispersive X-ray spectroscopy (EDX) data and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) of the 0.5 mm membrane. The EDX data gives atomic ratios of carbon, aluminium, gallium, nitrogen, silicon and oxygen.

Research results based upon these data are published at http://doi.org/10.1016/j.carbon.2020.11.067