Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator: data

This dataset describes a novel nanowire photonic crystal telecom laser with a curved cavity grown directly on silicon. This is the first realization of a curved cavity nanowire based laser and has relevance to fields such as telecommunication, bio and gas sensing and on chip spectroscopy.

The photoluminescence (PL) spectra were measured using a micron spatial resolution setup. The pumping laser is a pulsed 1MHz 630nm laser focused on a 6um diameter beam spot. The simulations were done using standard ANSYS Lumerical FDTD objects, monitors and materials.

Data includes: micro-PL spectra and images, Lumerical simulation output files

The .csv PL files encode a 2D image using two columns, wavelength (nm) and PL intensity (a.u.). The data points scan over the 2D image from left to right, and from top to bottom. Data files centered around 0nm are the 0th diffraction order and can be interpreted as PL maps.

The Lumerical output file 'Q factor vs radius.csv' contains Q factor and radius of curvature of the nanobeam as columns.

Research results based upon these data are pub;oshed at https://doi.org/10.1364/OE.499696